Enxense is currently developing a 2D pixel X-ray detector with full spectroscopy feature in each pixel. The concept is versatile and can be applicable for a variety of uses. Initially the concept was targeted for very high-rate X-ray fluoroscopy (EDXRF) detection, but it is just as relevant for X-ray Diffraction (XRD) detection (read comments about this after the EDXRF section on this page).

The concept, named HPXD (see photos below), allows for extremely high rate capacity per mm2, upholding of the rate capacity per mm2 independent of detection area, and upholding of the energy-resolution independent of detection area. Furthermore, it is suitable for being used with sensor material made of Silicon or Cd(Zn)Te. It also has the capability of providing full-field XRF imaging, and, it allows for construction of monolithic large surface detectors.

Pixel ASIC on test PCB Pixel sensor mounted on the ASIC

Used and tested as a EDXRF detector, the first prototype has a conceptual input rate capacity of ~107 photons per second per mm2, and a measured energy resolution of 250eV (see measured spectrum below). An energy resolution of better than 150eV is however plausible for next generation.

Advantages in EDXRF: The rate capability is order of magnitudes higher than a conventional Silicon Drift Detector (SDD), as illustrated in the figure below.

Advantages in XRD: The concept can be configured for 1D and 2D detection. One monolitic device in 20mm x 20mm size is feasible and also bigger is plausible. The system is fully spectroscopic as opposed to photon counting devices while the detection speed is comparable. Energy resoultion is significantly better than reported photon-counting type detectors (better than 3% on copper is feasable), and the versatility is naturally much better.

For further details, feel free to request a copy of our presentation at the DXC-2016 (see right column of this page).